![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: KorkmazMelih KaldirimMelih ArikanBulent SerincanUğur AslanBulent
Publisher: IOP Publishing
E-ISSN: 1361-6641|30|8|85006-85010
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.30, Iss.8, 2015-08, pp. : 85006-85010
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Almost all on GaAsSb p-i-n junctions
By Radojewska E. Beata Radojewski Jacek
International Journal of Electronics, Vol. 81, Iss. 4, 1996-10 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Ye Hao Li Lu Lotfi Hossein Lei Lin Yang Rui Q Keay Joel C Mishima Tetsuya D Santos Michael B Johnson Matthew B
Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Guo Xiaolu Wenquan Huang Jianliang Zhang Yanhua Wei Yang Cui Kai Cao Yulian Li Qiong
Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. :