Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

By Bergsten J   Malmros A   Tordjman M   Gamarra P   Lacam C   Forte-Poisson M-A di   Rorsman N  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105034-105040

IOP Publishing

Access to resources Recommend Favorite

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15019-15024

IOP Publishing

Access to resources Recommend Favorite

AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

By Witte W.   Reuters B.   Fahle D.   Behmenburg H.   Wang K.R.   Trampert A.   Holländer B.   Hahn H.   Kalisch H.   Heuken M.   Vescan A.  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85006-85011

IOP Publishing

Access to resources Recommend Favorite

Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

By  

Journal of Semiconductors, Vol. 35, Iss. 12, 2014-12 ,pp. : 124003-124006

IOP Publishing

Access to resources Recommend Favorite

Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer

By Sang Min Jung   Chang Taek Lee   Moo Whan Shin  

Semiconductor Science and Technology, Vol. 30, Iss. 7, 2015-07 ,pp. : 75012-75017

IOP Publishing

Access to resources Recommend Favorite