Three-dimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub-40 nm polysilicon nanowire FETs

Author: KimJungsik   OhHyeongwan   LeeJunyoung   BaekChang-Ki   MeyyappanM   LeeJeong-Soo  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|8|85015-85022

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.8, 2015-08, pp. : 85015-85022

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