Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

Publisher： Trans Tech Publications

E-ISSN： 1662-9779|2015|242|218-223

ISSN： 1012-0394

Source： Solid State Phenomena, Vol.2015, Iss.242, 2016-02, pp. : 218-223

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Low Temperature Internal Gettering of Bulk Defects in Silicon Photovoltaic Materials

By  

Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. : 109-12

Trans Tech Publications

Access to resources Recommend Favorite

Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H+ Ion Implantation into Silicon and Annealing

By  

Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. : 190-195

Trans Tech Publications

Access to resources Recommend Favorite

N-Si (nitrogen-silicon)

By Okamoto H.  

Journal of Phase Equilibria & Diffusion, Vol. 26, Iss. 3, 2005-08 ,pp. : 293-294

Springer Publishing Company

Access to resources Recommend Favorite

Effect of High-Temperature Annealing on the Microstructure and Hardness of White Pig Iron

By Afanas'ev V.K.   Shcherbedinskii G.V.   Kol'ba A.V.   Sochnev A.V.  

Metal Science and Heat Treatment, Vol. 45, Iss. 3-4, 2003-03 ,pp. : 95-97

Springer Publishing Company

Access to resources Recommend Favorite

Effect of Rapid Thermal Annealing on the Structural Evolution and Electrical Property of Gold Films Deposited on Silicon

By  

Key Engineering Materials, Vol. 2017, Iss. 730, 2017-03 ,pp. : 97-101

Trans Tech Publications

Access to resources Recommend Favorite