Publisher: Edp Sciences
E-ISSN: 1764-7177|01|C6|C6-225-C6-230
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.01, Iss.C6, 1991-12, pp. : C6-225-C6-230
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
BEAM INDUCED VARIATIONS OF GaAs CATHODOLUMINESCENCE : EFFECT OF HYDROGEN AND DEFORMATION
Le Journal de Physique Colloques, Vol. 50, Iss. C6, 1989-06 ,pp. :
Polarization Induced High Al Composition AlGaN p–n Junction Grown on Silicon Substrates
Chinese Physics Letters, Vol. 31, Iss. 11, 2014-11 ,pp. :
Experimental study on lifetimes and current production from a GaAs electron source
Journal de Physique III, Vol. 2, Iss. 3, 1992-03 ,pp. :
By Przezdziecka E Chusnutdinow S Guziewicz E Snigurenko D Stachowicz M Kopalko K Reszka A Kozanecki A
Journal of Physics D: Applied Physics, Vol. 48, Iss. 32, 2015-08 ,pp. :