Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K

Publisher： Edp Sciences

E-ISSN： 1764-7177|06|C3|C3-55-C3-59

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.06, Iss.C3, 1996-04, pp. : C3-55-C3-59

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-49-Pr3-52

Edp Sciences

Access to resources Recommend Favorite

Measurement and Modeling of the n-channel and p-channel MOSFET's Inversion Layer Mobility at Room and Low Temperature Operation

By  

Le Journal de Physique IV, Vol. 06, Iss. C3, 1996-04 ,pp. : C3-43-C3-47

Edp Sciences

Access to resources Recommend Favorite

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-25-Pr3-28

Edp Sciences

Access to resources Recommend Favorite

Hot-carrier degradation of CMOS inverters and ring oscillators at 77K

By  

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-37-C6-41

Edp Sciences

Access to resources Recommend Favorite

A MOBILITY MODEL FOR MOSFET DEVICE DIMULATION

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-265-C4-268

Edp Sciences

Access to resources Recommend Favorite