Author： Yang Jian Si Chaowei Han Guowei Zhang Meng Ma Liuhong Zhao Yongmei Ning Jin
Publisher： MDPI
E-ISSN： 2072-666x|6|2|281-290
ISSN： 2072-666x
Source： Micromachines, Vol.6, Iss.2, 2015-02, pp. : 281-290
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.
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