A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|625-628

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 625-628

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 249-252

Trans Tech Publications

Access to resources Recommend Favorite

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 120-123

Trans Tech Publications

Access to resources Recommend Favorite

Deep Level Defects in 4H-SiC Epitaxial Layers

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 225-228

Trans Tech Publications

Access to resources Recommend Favorite

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 432-435

Trans Tech Publications

Access to resources Recommend Favorite

High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 88-91

Trans Tech Publications

Access to resources Recommend Favorite