DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

By Xubo Song   Guodong Gu   Shaobo Dun   Yuanjie Lü   Tingting Han   Yuangang Wang   Peng Xu   Zhihong Feng  

Journal of Semiconductors, Vol. 35, Iss. 4, 2014-04 ,pp. : 44002-44005

IOP Publishing

Access to resources Recommend Favorite

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

By Zheli Wang   Jianjun Zhou   Yuechan Kong   Cen Kong   Xun Dong   Yang Yang   Tangsheng Chen  

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 94004-94007

IOP Publishing

Access to resources Recommend Favorite

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

By Reuters Benjamin  

Journal of Electronic Materials, Vol. 42, Iss. 5, 2013-05 ,pp. : 826-832

Springer Publishing Company

Access to resources Recommend Favorite

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

By Yacoub H   Fahle D   Finken M   Hahn H   Blumberg C   Prost W   Kalisch H   Heuken M   Vescan A  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115012-115017

IOP Publishing

Access to resources Recommend Favorite

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

By Yamin Zhang   Shiwei Feng   Hui Zhu   Xueqin Gong   Bing Deng   Lin Ma  

Journal of Semiconductors, Vol. 35, Iss. 10, 2014-10 ,pp. : 104003-104006

IOP Publishing

Access to resources Recommend Favorite