Related content

Surface contamination and electrical damage by focused ion beam: conditions applicable to the extraction of TEM lamellae from nanoelectronic devices

By Bender H   Franquet A   Drijbooms C   Parmentier B   Clarysse T   Vandervorst W   Kwakman L  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114015-114025

IOP Publishing

Access to resources Recommend Favorite

Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

By Zhao Lijie   Speck J.   Rajavel R.   Jensen J.   Leonard D.   Strand T.   Hamilton W.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 732-735

Springer Publishing Company

Access to resources Recommend Favorite

Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped Cd x Hg 1−x Te

By Haakenaasen R.   Colin T.   Steen H.   Trosdahl-Iversen L.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 849-852

Springer Publishing Company

Access to resources Recommend Favorite

Patterning amorphous fluoropolymer films by reactive ion milling

By Denhoff M.   Gao Mae  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 941-943

Springer Publishing Company

Access to resources Recommend Favorite

Assessment of Tight Pixel Geometry Influence on Surface Chemistry of Hg 1−X Cd X Te Focal Plane Array by Time of Flight–Secondary Ion Mass Spectroscopy: Novel Analytical Methods

By Garwood G.   Olshove R.   Pettijohn E.   Bangs J.   Liguori M.   Olson E.   Lua F.  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 937-948

Springer Publishing Company

Access to resources Recommend Favorite