Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides

Author： Bravaix A. Goguenheim D. Revil N. Vincent E.

Publisher： Elsevier

ISSN： 0026-2714

Source： Microelectronics Reliability, Vol.44, Iss.1, 2004-01, pp. : 65-77

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