Simulation of the substrate current in MOSFETs using a unified model for the Auger generation and recombination rate

Author: Ishihara T.   Enda T.   Matsuzawa K.  

Publisher: Elsevier

ISSN: 0038-1101

Source: Solid-State Electronics, Vol.48, Iss.3, 2004-03, pp. : 453-459

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