Period of time: 2016年8期
Publisher: IOP Publishing
Founded in: 1986
Total resources: 42
ISSN: 0268-1242
Subject: TN Radio Electronics, Telecommunications Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Semiconductor Science and Technology,volume 28,issue 8
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Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors
By Yang Feng,Hu Guangda,Wu Weibing,Yang Changhong,Wu Haitao,Tang Minghua in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks
By Garcia-Alonso D,Smit S,Bordihn S,Kessels W M M in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.A replacement of high-
By Han Jin-Woo, ,Yang J Joshua,Moon Dong-Il,Choi Yang-Kyu,Williams R Stanley,Meyyappan M in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.By Yun J.,Shim J-I,Shin D-S in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.Self-assembled homojunction In 2 O 3 transparent thin-film transistors
By Gherendi Florin,Nistor Magdalena,Antohe Stefan,Ion Lucian,Enculescu Ionut,Mandache Nicolae B. in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.Electrical properties of Ca x Sr 1−x Bi 2 Ta 2 O 9 ferroelectric-gate field-effect transistors
By Zhang Wei,Takahashi Mitsue,Sakai Shigeki in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics
By Feijoo P.C.,Pampillón M.A.,Andrés E San,Fierro J.L.G. in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.By Goumri-Said Souraya,Ozisik Haci,Deligoz Engin,Mohammed Benali Kanoun in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
By Witte W.,Reuters B.,Fahle D.,Behmenburg H.,Wang K.R.,Trampert A.,Holländer B.,Hahn H.,Kalisch H.,Heuken M.,Vescan A. in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.By Ji Hoon Kim ,Hwang Sung-Min,Yong Gon Seo ,Kwang Hyeon Baik ,Jung Ho Park in (2013)
Semiconductor Science and Technology,volume 28,issue 8 , Vol. 28, Iss. 8, 2013-08 , pp.