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By Grudowski P.   Holmes A.   Eiting C.   Dupuis R.  

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Springer Publishing Company

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Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

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Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

Springer Publishing Company

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Structural and Electrical Properties of Unintentionally Doped 4H-SiC Epitaxial Layers—Grown by Hot-Wall CVD

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Springer Publishing Company

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Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

By Kokubun Y.   Nishio J.   Abe M.   Ehara T.   Nakagomi S.  

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Effect of O 2 /CHF 3 plasma treatment on n-type GaN grown on sapphire by MOCVD

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