Drain leakage current and instability of drain current in Si/Si 1-x Ge x MOSFETs

By Tsuchiya T.   Goto  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 379-382

Elsevier

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UHV-CVD heteroepitaxial growth of Si 1-x Ge x alloys on Si(100) using silane and germane

By Thanh Vinh L.   Aubry-Fortuna V.   Bouchier D.   Guedj C.   Zheng Y.   Hincelin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 59-63

Elsevier

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Local strains in Si 1-x-y Ge x C y alloys as deduced from vibrational frequencies

By Finkman E.   Rucker H.   Prawer S.D.   Bodnar S.   Regolini J.L.   Bouchier D.   Boulmer J.   Meyer F.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 118-121

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Dislocation dissociation and stacking-fault energies in Ge 1-x Si x alloys

By Yonenaga I.   Lim S.-H.   Shindo D.  

Philosophical Magazine Letters, Vol. 80, Iss. 4, 2000-04 ,pp. : 193-197

Taylor & Francis Ltd

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Carrier activation process in As + implanted relaxed Si 1-x Ge x alloys

By Irisawa T.   Ueno T.   Yamaguchi S.   Nakagawa K.   Miyao M.   Shiraki Y.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 203-206

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