Strain and misfit dislocation density in finite lateral size Si 1-x Ge x films grown by selective epitaxy

By Hollander B.   Vescan L.   Mesters S.   Wickenhauser S.  

Thin Solid Films, Vol. 292, Iss. 1, 1997-01 ,pp. : 213-217

Elsevier

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UHV-CVD heteroepitaxial growth of Si 1-x Ge x alloys on Si(100) using silane and germane

By Thanh Vinh L.   Aubry-Fortuna V.   Bouchier D.   Guedj C.   Zheng Y.   Hincelin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 59-63

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Local strains in Si 1-x-y Ge x C y alloys as deduced from vibrational frequencies

By Finkman E.   Rucker H.   Prawer S.D.   Bodnar S.   Regolini J.L.   Bouchier D.   Boulmer J.   Meyer F.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 118-121

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Elastic instability in Ge 1- x Si x alloys under heavy-ion irradiation

By L. E. McNeil  

Philosophical Magazine Letters, Vol. 84, Iss. 2, 2004-02 ,pp. : 93-104

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Carrier activation process in As + implanted relaxed Si 1-x Ge x alloys

By Irisawa T.   Ueno T.   Yamaguchi S.   Nakagawa K.   Miyao M.   Shiraki Y.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 203-206

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