Relaxed epitaxial Si 1-x Ge x grown by MBE

By Monakhov E.V.   Shiryaev S.Y.   Nylandsted Larsen A.   Hartung J.   Davies G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 43-46

Elsevier

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Surface roughness of strain-relaxed Si 1-x Ge x layers grown by two-step growth method

By Iwano H.   Yoshikawa K.   Zaima S.   Yasuda Y.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 17-20

Elsevier

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Carrier mobilities in modulation doped Si 1-x Ge x heterostructures with respect to FET applications

By Hock G.   Gluck M.   Hackbarth T.   Herzog H.-J.   Kohn E.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 141-144

Elsevier

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UHV-CVD heteroepitaxial growth of Si 1-x Ge x alloys on Si(100) using silane and germane

By Thanh Vinh L.   Aubry-Fortuna V.   Bouchier D.   Guedj C.   Zheng Y.   Hincelin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 59-63

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Local strains in Si 1-x-y Ge x C y alloys as deduced from vibrational frequencies

By Finkman E.   Rucker H.   Prawer S.D.   Bodnar S.   Regolini J.L.   Bouchier D.   Boulmer J.   Meyer F.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 118-121

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