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Growth of AlN films using hydrazidoalane single-source precursors

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Metal-organic chemical vapour deposition of manganese gallium alloys from the novel mixed metal single-source precursors (CO) 5 Mn-Ga(C 2 H 5 ) 2 [N(CH 3 ) 3 ], (CO) 5 Mn-Ga(C 2 H 5 ) 2 (NC 7 H 13 ) and [(CO) 5 Mn] 2 Ga[(CH 2 ) 3 NMe 2 ]

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Growth of magnesium oxide thin films using single molecular precursors by metal-organic chemical vapor deposition

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Synthesis of Sn-doped a-C:H films by RF plasma-enhanced chemical vapor deposition and their characterization

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Thin Solid Films, Vol. 322, Iss. 1, 1998-06 ,pp. : 41-45

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