Characterization of Si/SiGe heterojunction bipolar transistors by deep level transient spectroscopy

Author： De Barros O.   Souifi A.   Le Tron B.   Vincent G.   Bremond G.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.294, Iss.1, 1997-02, pp. : 271-273

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