Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si 1-x Ge x , and Si 1-y C y base layers

By Heinemann B.   Knoll D.   Fischer G.G.   Schley P.   Osten H.J.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 347-351

Elsevier

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The growth kinetics of Si 1-x Ge x layers from SiH 4 and GeH 4

By Potapov A.V.   Orlov L.K.   Ivin S.V.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 191-195

Elsevier

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Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors

By Schaffler F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 1-10

Elsevier

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Furnace and rapid thermal crystallization of amorphous Ge x Si 1-x and Si for thin film transistors

By Rem J.B.   De Leuw M.C.V.   Verweij J.F.   Holleman J.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 152-156

Elsevier

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Properties of optically active Si:Er and Si 1-x Ge x layers grown by the sublimation MBE method

By Stepikhova M.V.   Andreev B.A.   Shmagin V.B.   Krasil'nik Z.F.   Kuznetsov V.P.   Shengurov V.G.   Svetlov S.P.   Jantsch W.   Palmetshofer L.   Ellmer H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 426-430

Elsevier

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