Polycrystalline silicon film growth in a SiF 4 /SiH 4 /H 2 plasma

By Lee B.   Quinn L.J.   Baine P.T.   Mitchell S.J.N.   Armstrong B.M.   Gamble H.S.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 55-58

Elsevier

Access to resources Recommend Favorite

Deposition rate optimization in SiH 4 /H 2 PECVD of hydrogenated microcrystalline silicon

By Amanatides E.   Mataras D.   Rapakoulias D.E.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 15-18

Elsevier

Access to resources Recommend Favorite

Real time analysis of amorphous and microcrystalline silicon film growth by multichannel ellipsometry

By Collins R.W.   Koh J.   Ferlauto A.S.   Rovira P.I.   Lee Y.   Koval R.J.   Wronski C.R.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 129-137

Elsevier

Access to resources Recommend Favorite

On the splitting of SiH absorption bands in infrared spectra of hydrogenated microcrystalline silicon

By Stryahilev D.   Diehl F.   Schroder B.   Scheib M.   Belogorokhov A. I.  

Philosophical Magazine B, Vol. 80, Iss. 10, 2000-10 ,pp. : 1799-1810

Taylor & Francis Ltd

Access to resources Recommend Favorite

From amorphous to microcrystalline silicon deposition in SiF 4 -H 2 -He plasmas: in situ control by optical emission spectroscopy

By Cicala G.   Capezzuto P.   Bruno G.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 203-205

Elsevier

Access to resources Recommend Favorite