On the splitting of SiH absorption bands in infrared spectra of hydrogenated microcrystalline silicon

By Stryahilev D.   Diehl F.   Schroder B.   Scheib M.   Belogorokhov A. I.  

Philosophical Magazine B, Vol. 80, Iss. 10, 2000-10 ,pp. : 1799-1810

Taylor & Francis Ltd

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High deposition rate a-Si:H layers from pure SiH 4 and from a 10% dilution of SiH 4 in H 2

By Estrada M.   Cerdeira A.   Pereyra I.   Soto S.  

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 176-179

Elsevier

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Deposition and characterisation of silicon grown in a SiF 4 /SiH 4 /H 2 mixture for TFT applications

By Quinn L.J.   Lee B.   Baine P.T.   Mitchell S.J.N.   Armstrong B.M.   Gamble H.S.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 7-10

Elsevier

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From amorphous to microcrystalline silicon deposition in SiF 4 -H 2 -He plasmas: in situ control by optical emission spectroscopy

By Cicala G.   Capezzuto P.   Bruno G.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 203-205

Elsevier

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Early stages of microcrystalline silicon film growth on amorphous substrate with SiH 4 gas heating

By Shirai H.   Arai T.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 19-22

Elsevier

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