Author： Herner S.B. Krishnamoorthy V. Naman A. Jones K.S. Gossmann H.-J. Tung R.T.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.302, Iss.1, 1997-06, pp. : 127-132
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
CoSi 2 and TiSi 2 for Si/SiGe heterodevices
By Gluck M. Schuppen A. Rosler M. Heinrich W. Hersener J. Konig U. Yam O. Eizenberg M. Cytermann C.
Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. :
Access to resources
Recommend
Morphological stability of TiSi 2 on polycrystalline silicon
Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. :
The formation of TiSi 2 by RTA processing
Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. :
The effect of elevated silicon substrate temperature on TiSi 2 formatio from a Ti film
By Ezoe K. Yamamoto T. Ishii K. Matsumoto S.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :