Optical properties and room-temperature photoluminescence from Tb 3+ ions in a-Si 1-x C x :H thin films

By Nikolaeva M.   Sendova-Vassileva M.   Dimova-Malinovska D.   Pivin J.C.  

Vacuum, Vol. 69, Iss. 1, 2002-12 ,pp. : 233-236

Elsevier

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Quantitative analysis of a-Si 1-x C x :H thin films by vibrational spectroscopy and nuclear methods

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Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. : 303-308

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Investigation of ion irradiation effects in a-Si X C 1-X :H thin films

By Grigonis A.   Silinskas M.   Kopustinskas V.  

Vacuum, Vol. 68, Iss. 3, 2002-11 ,pp. : 257-261

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Excited helium-induced CVD of a-Si 1-x C x :H films from trimethylchlorosilane

By Smirnova T.P.   Yakovkina L.V.   Ayupov B.M.   Dolgpvesova I.P.   Nadolinny V.A.   Kitchay V.N.  

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Fabrication of a-Si 1-x C x :H thin films for solar cells by the Cat-CVD method using a carbon catalyzer

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Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 170-173

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