Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

By Olivares J.   Martn P.   Rodrguez A.   Sangrador J.   Jimenez J.   Rodrguez T.  

Thin Solid Films, Vol. 358, Iss. 1, 2000-01 ,pp. : 56-61

Elsevier

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Low temperature synthesis of dense SiO 2 thin films by ion beam induced chemical vapor deposition

By Barranco A.   Yubero F.   Cotrino J.   Espinos J.P.   Bentez J.   Rojas T.C.   Allain J.   Girardeau T.   Riviere J.P.   Gonzalez-Elipe A.R.  

Thin Solid Films, Vol. 396, Iss. 1, 2001-09 ,pp. : 9-15

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Comparison of Si 1-y C y films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

By McNeill D.W.   Gay D.L.   Armstrong G.A.   Armstrong B.M.   Gamble H.S.   Ray S.K.   Maiti C.K.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 149-152

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Epitaxial growth of 3C-SiC by low-pressure chemical vapor deposition on a surface-structure-controlled molecular beam epitaxy layer

By Uchida M.   Kitabatake M.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 32-36

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Growth mechanisms of crystallites in the mixed-phase silicon films deposited by low-pressure chemical vapor deposition

By Wee H.   Lee C.   Shin S.-C.  

Thin Solid Films, Vol. 376, Iss. 1, 2000-11 ,pp. : 38-46

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