Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction

Author： Klaus J.W.   Ferro S.J.   George S.M.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.360, Iss.1, 2000-02, pp. : 145-153

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH 3

By Elam J.W.   Schuisky M.   Ferguson J.D.   George S.M.  

Thin Solid Films, Vol. 436, Iss. 2, 2003-07 ,pp. : 145-156

Elsevier

Access to resources Recommend Favorite

Atomic layer deposition of boron nitride using sequential exposures of BCl 3 and NH 3

By Ferguson J.D.   Weimer A.W.   George S.M.  

Thin Solid Films, Vol. 413, Iss. 1, 2002-06 ,pp. : 16-25

Elsevier

Access to resources Recommend Favorite

Nanoscale Structuring of Surfaces by Using Atomic Layer Deposition

By  

ANGEWANDTE CHEMIE INTERNATIONAL EDITION, Vol. 54, Iss. 50, 2015-12 ,pp. : 15014-15021

John Wiley & Sons Inc

Access to resources Recommend Favorite

Surface reaction mechanism and morphology control in AlP atomic layer epitaxy

By Ishii M.   Iwai S.   Ueki T.   Aoyagi Y.  

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 6-10

Elsevier

Access to resources Recommend Favorite

Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors

By Hausmann D.M.   de Rouffignac P.   Smith A.   Gordon R.   Monsma D.  

Thin Solid Films, Vol. 443, Iss. 1, 2003-10 ,pp. : 1-4

Elsevier

Access to resources Recommend Favorite