Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

By D. U'Ren G.   Goorsky M.S.   Wang K.L.  

Thin Solid Films, Vol. 365, Iss. 1, 2000-04 ,pp. : 147-150

Elsevier

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Residual strain and surface roughness of Si 1-x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

By Tatsuyama C.   Asano T.   Nakao T.   Matada H.   Tambo T.   Ueba H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 161-166

Elsevier

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Intense visible photoluminescence from molecular beam epitaxy porous Si 1-x Ge x grown on Si

By Unal B.   Bayliss S.C.   Phillips P.   Parker E.H.C.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 274-279

Elsevier

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In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si 1-x Ge x on Si(001)

By Hiroyama Y.   Tamura M.  

Thin Solid Films, Vol. 334, Iss. 1, 1998-12 ,pp. : 1-5

Elsevier

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Surface roughness of strain-relaxed Si 1-x Ge x layers grown by two-step growth method

By Iwano H.   Yoshikawa K.   Zaima S.   Yasuda Y.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 17-20

Elsevier

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