Author: Tillack B. Heinemann B. Knoll D.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 189-194
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Atomic control of doping during SiGe epitaxy
By Tillack B.
Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. :
By Liu J.L. Wang K.L. Moore C.D. Goorsky M.S. Borca-Tasciuc T. Chen G.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Formation of thin gate oxides on SiGe with atomic oxygen
By Ogryzlo E.A. Zheng L. Heinrich B. Myrtle K. Lafontaine H.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :