Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology

Author： Sugiyama N.   Mizuno T.   Takagi S.   Koike M.   Kurobe A.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 199-202

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