A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems

Author: Leong W.Y.   Churchill A.C.   Robbins D.J.   Glasper J.L.   Williams G.M.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 375-378

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Abstract