Structural investigation of Si/SiGe superlattices on vicinal (113) oriented Si

By Stangl J.   Holy V.   Grim J.   Bauer G.   Zhu J.   Brunner K.   Abstreiter G.   Kienzle O.   Ernst F.  

Thin Solid Films, Vol. 357, Iss. 1, 1999-12 ,pp. : 71-75

Elsevier

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Growth of self-assembled homogeneous SiGe-dots on Si(100)

By Schittenhelm P.   Abstreiter G.   Darhuber A.   Bauer G.   Werner P.   Kosogov A.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 291-295

Elsevier

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HRTEM study of strained Si/Ge multilayers

By Romeo M.   Uhlaq-Bouillet C.   Deville J.P.   Werckmann J.   Ehret G.   Chelly R.   Dentel D.   Angot T.   Bischoff J.L.  

Thin Solid Films, Vol. 319, Iss. 1, 1998-04 ,pp. : 168-171

Elsevier

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The elastic strain and composition of self-assembled GeSi islands on Si(001)

By Krasil'nik Z.F.   Dolgov I.V.   Drozdov Y.N.   Filatov D.O.   Gusev S.A.   Lobanov D.N.   Moldavskaya L.D.   Novikov A.V.   Postnikov V.V.   Vostokov N.V.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 171-175

Elsevier

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A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems

By Leong W.Y.   Churchill A.C.   Robbins D.J.   Glasper J.L.   Williams G.M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 375-378

Elsevier

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