X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

By Baribeau J.-M.   Lafontaine H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

Elsevier

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UHV-CVD heteroepitaxial growth of Si 1-x Ge x alloys on Si(100) using silane and germane

By Thanh Vinh L.   Aubry-Fortuna V.   Bouchier D.   Guedj C.   Zheng Y.   Hincelin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 59-63

Elsevier

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Cold-walled UHV/CVD batch reactor for the growth of Si 1-x Ge x layers

By Thomsen E.V.   Christensen C.   Andersen C.R.   Pedersen E.V.   Egginton P.N.   Hansen O.   Petersen J.W.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 72-75

Elsevier

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Role of hydrogen during Si capping of strained Ge or Si 1-x Ge x hut clusters

By Dentel D.   Bischoff J.L.   Kubler L.   Bolmont D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 49-52

Elsevier

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Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

Elsevier

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