Capacitance-voltage study of single-crystalline Si dots on ultrathin buried SiO 2 formed by nanometer-scale local oxidation

Author： Ishikawa Y.   Kosugi M.   Kumezawa M.   Tsuchiya T.   Tabe M.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 69-72

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