Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs

By Hansch W.   Rao V.R.   Fink C.   Kaesen F.   Eisele I.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 206-214

Elsevier

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Optimization of the channel doping profile of vertical sub-100 nm MOSFETs

By Kaesen F.   Fink C.   Anil K.G.   Hansch W.   Doll T.   Grabolla T.   Schreiber H.   Eisele I.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 309-312

Elsevier

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Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

By Fink C.   Anil K.G.   Geiger H.   Hansch W.   Schulze J.   Sulima T.   Eisele I.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 383-386

Elsevier

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Doped vs. undoped Si 1-x-y Ge x C y layers in sub-100 nm vertical p-channel MOSFETs

By Yang M.   Sturm J.C.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 366-370

Elsevier

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Spectroscopy on MBE-grown interfaces with high spatial resolution

By Von Kanel H.   Meyer T.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 214-219

Elsevier

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