MBE-grown vertical power-MOSFETs with 100-nm channel length

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Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 207-210

Elsevier

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Optimization of the channel doping profile of vertical sub-100 nm MOSFETs

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Doped vs. undoped Si 1-x-y Ge x C y layers in sub-100 nm vertical p-channel MOSFETs

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Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 383-386

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The impact of gate oxide scaling (3.2-1.2 nm) on sub-100 nm complementary metal-oxide-semiconductor field-effect transistors

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Thin Solid Films, Vol. 419, Iss. 1, 2002-11 ,pp. : 218-224

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