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Elsevier

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Relaxed epitaxial Si 1-x Ge x grown by MBE

By Monakhov E.V.   Shiryaev S.Y.   Nylandsted Larsen A.   Hartung J.   Davies G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 43-46

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The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si 1-x Ge x on Si substrates

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Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. : 362-371

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Erratum to ''Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS'' - Thin Solid films 369 (2000) 29-32

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Surface roughness of strain-relaxed Si 1-x Ge x layers grown by two-step growth method

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