Author: Dosev D.K. Puigdollers J. Orpella A. Voz C. Fonrodona M. Soler D. Marsal L.F. Pallares J. Bertomeu J. Andreu J. Alcubilla R.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.383, Iss.1, 2001-02, pp. : 307-309
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Thin-film transistors deposited by hot-wire chemical vapor deposition
By Stannowski B. Rath J.K. Schropp R.E.I.
Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. :
Hot-wire silicon nitride for thin-film transistors
By Stannowski B. Rath J.K. Schropp R.E.I.
Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. :
Hot-wire thin-film transistors on PET at 100 o C
By Conde J.P. Alpuim P. Chu V.
Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. :
Hot-wire amorphous silicon thin-film transistors on glass
By Stannowski B. Schropp R.E.I.
Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. :