Low-frequency excess noise induced by hot-carrier injection in polysilicon thin-film transistors

By Bove A.   Giovannini S.   Valletta A.   Mariucci L.   Pecora A.   Fortunato G.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 147-150

Elsevier

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Subthreshold characteristics of submicrometer polysilicon thin film transistor

By Yaung D.N.   Fang Y.K.   Huang K.C.   Wang Y.J.   Hung C.C.   Liang M.S.   Wuu S.G.  

Thin Solid Films, Vol. 382, Iss. 1, 2001-02 ,pp. : 271-274

Elsevier

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Origin of low frequency noise in polycrystalline silicon thin-film transistors

By Dimitriadis C.A.   Brini J.   Kamarinos G.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 113-116

Elsevier

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Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 o C strain point glass substrates

By Hatalis M.K.   Kouvatsos D.N.   Kung J.H.   Voutsas A.T.   Kanicki J.  

Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 281-285

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Low temperature (=< 600 o C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

By Pichon L.   Raoult F.   Mourgues K.   Kis-Sion K.   Mohammed-Brahim T.   Bonnaud O.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 133-136

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