Properties of a-SiC:H films deposited in high power regime

By Ambrosone G.   Ballarini V.   Coscia U.   Ferrero S.   Giorgis F.   Maddalena P.   Patelli A.   Rava P.   Rigato V.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 279-283

Elsevier

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Multilayer structures induced by plasma and laser beam treatments on a-Si:H and a-SiC:H thin films

By Mitu B.   Dinescu G.   Dinescu M.   Ferrari A.   Balucani M.   Lamedica G.   Dementjev A.P.   Maslakov K.I.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 230-234

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A study on the structural characterization of a-SiC:H films by the gas evolution method

By Park J.-H.   Choi J.-B.   Kim H.-Y.   Lee K.-Y.   Lee J.-Y.  

Thin Solid Films, Vol. 266, Iss. 2, 1995-10 ,pp. : 129-132

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Boron and phosphorus doping of a-SiC:H thin films by means of ion implantation

By Demichelis F.   Crovini G.   Pirri C.   Tresso E.   Galloni R.   Summonte C.   Rizzoli R.   Zignani F.   Rava P.  

Thin Solid Films, Vol. 265, Iss. 1, 1995-09 ,pp. : 113-118

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Effects of high-temperature annealing on the structure of reactive sputtering a-SiC:H films

By Wang Y.   Wang H.   Ma G.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 249-252

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