X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

By Qu B.   Zheng X.H.   Wang Y.T.   Feng Z.H.   Liu S.A.   Lin S.M.   Yang H.   Liang J.W.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 29-33

Elsevier

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Characterization of ZnSe films grown on GaAs substrates with In x Ga l-x As and Al x Ga 1-x As buffer layers

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Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 37-40

Elsevier

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High resolution diffraction and DLTS investigation results of the epitaxial Ga 1-x Al x As/GaAs layers produced with the MOCVD method

By Czekala-Mukalled Z.   Kunminski S.   Placzek-Popko E.   Szatkowski J.   Kozlowski J.   Jedral L.  

Vacuum, Vol. 48, Iss. 3, 1997-03 ,pp. : 269-271

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Identification of interfacial layers in Ohmic contacts to n-type GaN and Al _x Ga_{1– x} N/GaN heterostructures using high-resolution electron microscopy

By Bright A. N.   Humphreys C. J.  

Philosophical Magazine B, Vol. 81, Iss. 11, 2001-11 ,pp. : 1725-1744

Taylor & Francis Ltd

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Influence of surface strain on the MOVPE growth of InGaP epitaxial layers

By Novák J.   Hasenöhrl S.   Vávra I.   Kučera M.  

Applied Physics A, Vol. 87, Iss. 3, 2007-06 ,pp. : 511-516

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