Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

Author: Perera R.   Ikeda A.   Hattori R.   Kuroki Y.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.423, Iss.2, 2003-01, pp. : 212-217

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Abstract