Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition

By Boucaud P.   Le Thanh V.   Sauvage S.   Debarre D.   Bouchier D.   Lourtioz J.-M.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 240-243

Elsevier

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Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition

By Joo S.-J.   Yoon E.   Hwang S.-H.   Whang K.-W.   Chun S.K.   Dong Kim Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 111-115

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Kinetic model for a spontaneous islanding during ultra-high vacuum deposition

By Dubrovskii V.G.   Cirlin G.E.   Bauman D.A.   Kozachek V.V.   Mareev V.V.  

Vacuum, Vol. 50, Iss. 1, 1998-05 ,pp. : 187-190

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Study of surface roughening of tensily strained Si 1-x-y Ge x C y films grown by ultra high vacuum-chemical vapor deposition

By Calmes C.   Bouchier D.   Debarre D.   Le Thanh V.   Clerc C.  

Thin Solid Films, Vol. 428, Iss. 1, 2003-03 ,pp. : 150-155

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High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

By Sakai M.   Tsutsumi T.   Yoshioka T.   Masuda A.   Matsumura H.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 330-334

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