Effect of ion implantation on the structural properties of a-Si:H films

Author： Danesh P.   Pantchev B.   Savatinova I.   Liarokapis E.   Schmidt B.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.69, Iss.1, 2002-12, pp. : 83-86

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Role of ion bombardment on the properties of a-Si:H films

By Aguas H.   Martins R.   Fortunato E.  

Vacuum, Vol. 60, Iss. 1, 2001-01 ,pp. : 247-254

Elsevier

Access to resources Recommend Favorite

Doping effects on the optical properties of evaporated a-Si:H films

By Bakry A.M.   El-Naggar A.H.  

Thin Solid Films, Vol. 360, Iss. 1, 2000-02 ,pp. : 293-297

Elsevier

Access to resources Recommend Favorite

Structural and optical properties modification of a-SiC:H by Ga + ion implantation

By Tsvetkova T.   Angelov O.   Sendova-Vassileva M.   Dimova-Malinovska D.   Bischoff L.   Adriaenssens G.J.   Grudzinski W.   Zuk J.  

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 467-470

Elsevier

Access to resources Recommend Favorite

Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films

By Martins R.   Aguas H.   Ferreira I.   Silva V.   Cabrita A.   Fortunato E.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 165-168

Elsevier

Access to resources Recommend Favorite

Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment

By Abramov A.S.   Kosarev A.I.   Roca i Cabarrocas P.   Shutov M.V.   Vinogradov A.J.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 178-180

Elsevier

Access to resources Recommend Favorite