PECVD formation of ultrathin silicon nitride layers for CMOS technology

Author: Beck R.B.   Giedz M.   Wojtkiewicz A.   Kudla A.   Jakubowski A.  

Publisher: Elsevier

ISSN: 0042-207X

Source: Vacuum, Vol.70, Iss.2, 2003-03, pp. : 323-329

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Abstract