Effect of BaTi 4 O 9 fibers on dielectric properties of 0.64 BaTi 4 O 9 +0.36 BaEu 2 Ti 4 O 12 composites

By Song Y.   Wang F.   Jiang Z.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 615-620

Elsevier

Access to resources Recommend Favorite

Growth and characterization of Al 2 O 3 gate dielectric films by low-pressure metalorganic chemical vapor deposition

By Shao Q.-Y.   Li A.-D.   Ling H.-Q.   Wu D.   Wang Y.   Feng Y.   Yang S.-Z.   Liu Z.-G.   Wang M.   Ming N.-B.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 842-848

Elsevier

Access to resources Recommend Favorite

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

By Zhu J.   Liu Z.G.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 849-854

Elsevier

Access to resources Recommend Favorite

Defect structure and chemical bonding of p-type ZnO:Sb thin films prepared by pulsed laser deposition

By Santos-Ortiz Reinaldo   Sun Wei   Nyandoto Gilbert   Du Jincheng   Shepherd Nigel D    

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115019-115024

IOP Publishing

Access to resources Recommend Favorite

Ba 0.7 Sr 0.3 TiO 3 powders with B 2 O 3 additive prepared by the sol-gel method for use as microwave material

By Hu T.   Jantunen H.   Uusimaki A.   Leppavuori S.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 215-221

Elsevier

Access to resources Recommend Favorite