Infrared Tomography of the Lifetime and the Diffusion Length of Charge Carriers in Semiconductor Silicon Ingots

Author: Akhmetov V.D.   Fateev N.V.  

Publisher: Springer Publishing Company

ISSN: 0019-8447

Source: Industrial Laboratory, Vol.66, Iss.10, 2000-10, pp. : 657-662

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