Growth and characterization of GaN thin films on SiC SOI substrates

By Steckl A.   Deveajan J.   Tran C.   Stall R.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 217-223

Springer Publishing Company

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Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n + -p junction

By Inoue N.   Itoh A.   Kimoto T.   Matsunami H.   Nakata T.   Inoue M.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 165-171

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Si-implantation activation annealing of GaN up to 1400°C

By Zolper J.   Han J.   Biefeld R.   Deusen S.   Wampler W.   Reiger D.   Pearton S.   Williams J.   Tan H.   Karlicek R.   Stall R.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 179-184

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Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

By Hanser A.   Wolden C.   Perry W.   Zheleva T.   Carlson E.   Banks A.   Therrien R.   Davis R.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 238-245

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Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

By Sánchez-García M.   Calleja E.   Sanchez F.   Calle F.   Monroy E.   Basak D.   Muñoz E.   Villar C.   Sanz-Hervas A.   Aguilar M.   Serrano J.   Blanco J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 276-281

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