Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n + -p junction

Author: Inoue N.   Itoh A.   Kimoto T.   Matsunami H.   Nakata T.   Inoue M.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.26, Iss.3, 1997-03, pp. : 165-171

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Abstract