Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

By Si Weimin   Dudley Michael   Kong Hua   Sumakeris Joe   Carter Calvin  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 151-159

Springer Publishing Company

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Activation of nitrogen implants in 6H-SiC

By Pan J.   Cooper J.   Melloch M.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 208-211

Springer Publishing Company

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Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory

By Si Weimin   Dudley Michael   Glass Robert   Tsvetkov Valeri   Carter Calvin  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 128-133

Springer Publishing Company

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An EPR study of defects induced in 6H-SiC by ion implantation

By Barklie R.   Collins M.   Holm B.   Pacaud Y.   Skorupa W.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 137-143

Springer Publishing Company

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Hydrogen passivation in n- and p-type 6H-SiC

By Ren F.   Grow J.   Bhaskaran M.   Wilson R.   Pearton S.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 198-202

Springer Publishing Company

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