Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n -Type SiC for High-Temperature Applications

By Virshup Ariel  

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 400-405

Springer Publishing Company

Access to resources Recommend Favorite

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

By Vivona M   Greco G   Giannazzo F   Nigro R Lo   Rascunà S   Saggio M   Roccaforte F  

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75018-75024

IOP Publishing

Access to resources Recommend Favorite

High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC

By Oder T.   Williams J.   Bozack M.   Iyer V.   Mohney S.   Crofton J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 324-329

Springer Publishing Company

Access to resources Recommend Favorite

Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC

By Chao Han   Yuming Zhang   Qingwen Song   Xiaoyan Tang   Hui Guo   Yimen Zhang   Fei Yang   Yingxi Niu  

Journal of Semiconductors, Vol. 36, Iss. 12, 2015-12 ,pp. : 123006-123014

IOP Publishing

Access to resources Recommend Favorite

Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications

By Daves Walter  

Journal of Electronic Materials, Vol. 40, Iss. 9, 2011-09 ,pp. : 1990-1997

Springer Publishing Company

Access to resources Recommend Favorite